The Raman spectroscopy of diamond films deposited on metal and insulator substrates with varying thermal expansion coefficient
Polycryst. diamond films were deposited by hot filament assisted chem. vapor deposition on five metal and insulator substrates. The films obtained were studied by Raman spectroscopy. The position of the Raman line shifts to higher wavenumbers when the thermal expansion coeff. of the substrate material increases. This effect is interpreted as a result of the internal stress in the diamond films induced by the cooling from the deposition temp. to room temp. The width of the Raman peak ranges from 10.9 to 16.6 cm-1, with a min. when the thermal expansion coeff. of the substrate is close to that of diamond.
Keywords: 60676-86-0 (Fused quartz) Role: USES (Uses) (Raman shift of diamond films on substrate of) ; 1344-28-1 (Aluminum oxide) ; 7439-98-7 (Molybdenum) ; 7440-21-3 (Silicon) ; 7440-25-7 (Tantalum) Role: PRP (Properties) (Raman shift of diamond films on substrate o ; Raman diamond film metal insulator substrate
Copyright 2003 ACS
Optical, Electron, and Mass Spectroscopy and Other Related Properties
Lab. Chim. Tech.,EPFL,Lausanne,Switz. FIELD URL:
written in English.
Raman spectra (of diamond films deposited on metal or insulator substrates with different thermal expansion coeff.)
Record created on 2011-02-01, modified on 2016-08-09