Gas phase versus surface contributions to photolytic laser chemical vapor deposition rates

The rate of cw photolytic laser chem. vapor deposition (LCVD) of Pt was measured for l = 350 nm as a function of light intensity and metalorg. vapor pressure. The growth of the metal films was studied in situ and in real time by monitoring optical transmission. At low intensities the transmitted light decreases monotonically with time, and the LCVD process is photolytic with its rate limiting step in the surface adlayer. At higher intensities 2 distinct time domains were obsd. An improved method for distinguishing between adlayer and gas-phase limiting processes is demonstrated. These observations are confirmed by studying the photolytic deposition rates while varying the thickness of the adlayer.


Published in:
Applied Physics A, 45, 4, 337-343
Year:
1988
Keywords:
Note:
Copyright 2003 ACS
CAPLUS
AN 1988:430354
CAN 109:30354
75-2
Crystallography and Liquid Crystals
74
Lab. Chim. Tech.,Ec. Polytech. Fed. Lausanne,Lausanne,Switz. FIELD URL:
Journal
APSFDB
written in English.
Photolysis (of platinum hexafluoroacetylacetonato complex, for platinum film deposition); Laser radiation (on vapor deposition of platinum films, gas phase vs. surface contributions in)
Laboratories:




 Record created 2011-02-01, last modified 2018-01-28


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)