Gas phase versus surface contributions to photolytic laser chemical vapor deposition rates
The rate of cw photolytic laser chem. vapor deposition (LCVD) of Pt was measured for l = 350 nm as a function of light intensity and metalorg. vapor pressure. The growth of the metal films was studied in situ and in real time by monitoring optical transmission. At low intensities the transmitted light decreases monotonically with time, and the LCVD process is photolytic with its rate limiting step in the surface adlayer. At higher intensities 2 distinct time domains were obsd. An improved method for distinguishing between adlayer and gas-phase limiting processes is demonstrated. These observations are confirmed by studying the photolytic deposition rates while varying the thickness of the adlayer.
Keywords: 7440-06-4 (Platinum) Role: USES (Uses) (deposition of films of ; gas phase vs. surface contributions to photolytic laser chem. vapor); 65353-51-7 Role: RCT (Reactant) ; RACT (Reactant or reagent) (photolysis of ; in chem. vapor deposition of platinum films ; deposition platinum laser chem vapor
Copyright 2003 ACS
Crystallography and Liquid Crystals
Lab. Chim. Tech.,Ec. Polytech. Fed. Lausanne,Lausanne,Switz. FIELD URL:
written in English.
Photolysis (of platinum hexafluoroacetylacetonato complex, for platinum film deposition); Laser radiation (on vapor deposition of platinum films, gas phase vs. surface contributions in)
Record created on 2011-02-01, modified on 2016-08-09