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conference paper
Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si
2008
Microscopy Of Semiconducting Materials 2007
Fully epitaxial germanium-on-insulator structures have been grown for the first time on (001) Si substrates by using a perovskite oxide template. Detailed transmission electron microscopy analysis revealed that a two-temperature growth procedure is required in order to avoid three-dimensional island growth and to obtain Continuous and flat Ge films. The interface between the oxide and Ge is fully crystalline and atomically sharp. A high density of stacking faults and twin structures has been found preferentially originating from the surface toughness of the oxide.
Type
conference paper
Web of Science ID
WOS:000263468800027
Authors
Dieker, Ch
•
Seo, J. W.
•
Guiller, A.
•
Sousa, M.
•
Locquet, J-P
•
Fompeyrine, J.
•
Panayiotatos, Y.
•
Sotiropoulos, A.
•
Argyropoulos, K.
•
Dimoulas, A.
Publication date
2008
Published in
Microscopy Of Semiconducting Materials 2007
Series title/Series vol.
Springer Proceedings In Physics; 120
Start page
119
End page
122
Peer reviewed
REVIEWED
EPFL units
Event name | Event place | Event date |
Cambridge, ENGLAND | Apr 02-05, 2007 | |
Available on Infoscience
November 30, 2010
Use this identifier to reference this record