Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si

Fully epitaxial germanium-on-insulator structures have been grown for the first time on (001) Si substrates by using a perovskite oxide template. Detailed transmission electron microscopy analysis revealed that a two-temperature growth procedure is required in order to avoid three-dimensional island growth and to obtain Continuous and flat Ge films. The interface between the oxide and Ge is fully crystalline and atomically sharp. A high density of stacking faults and twin structures has been found preferentially originating from the surface toughness of the oxide.


Published in:
Microscopy Of Semiconducting Materials 2007, 120, 119-122
Presented at:
15th Conference on Microscopy of Semiconducting Materials, Cambridge, ENGLAND, Apr 02-05, 2007
Year:
2008
Publisher:
Springer-Verlag New York, Ms Ingrid Cunningham, 175 Fifth Ave, New York, Ny 10010 Usa
Keywords:
Laboratories:




 Record created 2010-11-30, last modified 2018-03-17


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