PMBAR* - shear mode TFBAR based on (001)AlN thin film Piezo-Modulated Bulk Acoustic wave Resonator

A novel concept for shear mode Bulk Acoustic Resonators (BAR) is presented. It is based on c-axis oriented AlN thin films grown on silicon dioxide thin films, combined with interdigitated electrodes. Such a structure leads to an excitation of mainly shear mode displacements in the AlN film. However, a more pure mode is expected if only every second electrode section would contain active AlN, thus requiring means to selective disabling the piezoelectricity in AlN. In this article, such piezo-modulated BAR structures are studied by the finite element method to evaluate the theoretical performance. Preliminary experimental results show the practical feasibility of the new concept. A first test device delivers a quality factor of 1100 in air.


Published in:
2008 Ieee Ultrasonics Symposium, Vols 1-4 And Appendix, 1215-1217
Presented at:
IEEE Ultrasonics Symposium, Beijing, PEOPLES R CHINA, Nov 02-05, 2008
Year:
2008
Publisher:
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
ISBN:
978-1-4244-2428-3
Keywords:
Laboratories:




 Record created 2010-11-30, last modified 2018-01-28


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)