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research article
Explicit Compact Model for Ultranarrow Body FinFETs
An explicit charge-based compact model for lightly doped FinFETs is proposed. This design-oriented model is valid and continuous in all operating regimes (subthreshold, linear, and saturation) for channel lengths (L) down to 25 nm, Fin widths (W-Si) down to 3 mn, and Fin heights (H-Si) down to 50 nm with a single set of parameters. It takes short-channel effects, subthreshold slope degradation, drain-induced barrier lowering, drain saturation voltage with velocity saturation, channel length modulation, and quantum mechanical effects into account.
Type
research article
Web of Science ID
WOS:000267433800025
Authors
Publication date
2009
Published in
Volume
56
Start page
1543
End page
1547
Peer reviewed
REVIEWED
Available on Infoscience
November 30, 2010
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