Explicit Compact Model for Ultranarrow Body FinFETs

An explicit charge-based compact model for lightly doped FinFETs is proposed. This design-oriented model is valid and continuous in all operating regimes (subthreshold, linear, and saturation) for channel lengths (L) down to 25 nm, Fin widths (W-Si) down to 3 mn, and Fin heights (H-Si) down to 50 nm with a single set of parameters. It takes short-channel effects, subthreshold slope degradation, drain-induced barrier lowering, drain saturation voltage with velocity saturation, channel length modulation, and quantum mechanical effects into account.


Published in:
IEEE Transactions on Electron Devices, 56, 1543-1547
Year:
2009
ISSN:
0018-9383
Keywords:
Laboratories:




 Record created 2010-11-30, last modified 2018-01-28


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