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research article
Spatially Resolved Potential Distribution in Carbon Nanotube Cross-Junction Devices
2009
Crossed-nanotube junctions, the basic constituents of carbon nanotube networks, are investigated by scanning photocurrent microscopy. The location of the predominant electrostatic potential drop, at the electrical contacts or at the junction, is found to be highly dependent on the transport regime. Also, whereas Schottky barriers are formed at M-S (metal-semiconductor) nanotube crossings, isotype heterojunctions are formed at S-S ones (figure).
Type
research article
Web of Science ID
WOS:000268309100012
Authors
Publication date
2009
Published in
Volume
21
Start page
2720
End page
2724
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
November 30, 2010
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