Noninvasive metal contacts in chemically derived graphene devices
We study the properties of gold contacts on chemically derived graphene devices by scanning photocurrent microscopy and gate-dependent electrical transport measurements. In the as-fabricated devices, negligible potential barriers are found at the gold/graphene interface, reflecting the noninvasive character of the contacts. Device annealing above 300 degrees C leads to the formation of potential barriers at the contacts concomitant with metal-induced p-type doping of the sheet as a consequence of the diffusion of gold from the electrodes. The transfer characteristics of the chemically derived graphene devices point toward the suppression of Klein tunneling in this material.
Keywords: annealing ; carbon compounds ; diffusion ; doping ; gold ; graphene ; metal-insulator boundaries ; monolayers ; photoconductivity ; tunnelling ; Field-Effect Transistors ; Oxide Sheets ; Graphite
Record created on 2010-11-30, modified on 2016-08-09