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  4. Recent Developments in Long Wavelength VCSELs Based on Localized Wafer Fusion
 
conference paper

Recent Developments in Long Wavelength VCSELs Based on Localized Wafer Fusion

Kapon, E.  
•
Sirbu, A.  
•
Iakovlev, V.  
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2009
Icton: 2009 11Th International Conference On Transparent Optical Networks
11th International Conference on Transparent Optical Networks

We review recent results on wafer fused long wavelength VCSELs emitting in the 1310 - 2000 nm range. This technology allows reaching fundamental mode output in excess of 4.5 mW at room temperature and close to 3 mW at 70 degrees C for both the 1310 nm and 1550 nm wavebands-the highest values obtained so far. Emission wavelength can be tuned continuously with current with a tuning range as large as 15 nm. For 2000 nm emission wavelength, room temperature output is similar to 0.5 mW, limited so far by high optical absorption in the cavity. 1310 nm-VCSELs that are optimized for high speed operation yield excellent 10 Gbps operation both at room temperature and at 100 degrees C.

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Type
conference paper
DOI
10.1109/ICTON.2009.5185024
Web of Science ID

WOS:000274048000057

Author(s)
Kapon, E.  
Sirbu, A.  
Iakovlev, V.  
Mereuta, A.  
Caliman, A.  
Suruceanu, G.  
Date Issued

2009

Publisher

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa

Published in
Icton: 2009 11Th International Conference On Transparent Optical Networks
Start page

216

End page

219

Subjects

long-wavelength VCSELs

•

single-mode output power

•

wavelength tuning

•

resonant frequency

•

large signal modulation

•

eye-diagrams

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
LPN  
Event nameEvent placeEvent date
11th International Conference on Transparent Optical Networks

S Miguel, PORTUGAL

Jun 28-Jul 02, 2009

Available on Infoscience
November 30, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/59467
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