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conference paper
Control of Ferromagnetism in a (Ga,Mn)As - Based Multiferroic System via a Ferroelectric Gate
2009
Physics Of Semiconductors
We report the implementation of a ferroelectric gate field effect transistor (FeFET) with a ferromagnetic (Ga,Mn)As conducting channel. The Curie temperature T-C in the channel is modulated by non-volatile poling of the gate. The ferroelectric state, and thus also the altered ferromagnetic behavior, persists for periods of more than a week. T-C control is demonstrated by resistance, magnetotransport and hysteresis measurements.
Type
conference paper
Web of Science ID
WOS:000281590800222
Authors
Riester, S. W. E.
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Rushforth, A. W.
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Edmonds, K. W.
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Campion, R. P.
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Foxon, C. T.
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Gallagher, B. L.
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Jungwirth, T.
Publication date
2009
Published in
Physics Of Semiconductors
Series title/Series vol.
AIP Conference Proceedings; 1199
Start page
471
End page
472
Peer reviewed
REVIEWED
EPFL units
Event name | Event place | Event date |
Rio de Janeiro, BRAZIL | Jul 27-Aug 01, 2008 | |
Available on Infoscience
November 30, 2010
Use this identifier to reference this record