Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process

Capacitive measurement of very small displacement of nano-electro-mechanical systems (NEMS) presents some issues that are discussed in this article. It is shown that performance is fairly improved when integrating on a same die the NEMS and CMOS electronics. As an initial step toward full integration, an in-plane suspended gate MOSFET (SGMOSFET) compatible with a front-end CMOS has been developed. The device model, its fabrication, and its experimental measurement are presented. Performance obtained with this device is experimentally compared to the one obtained with a stand-alone NEMS readout circuit, which is used as a reference detection system. The 130 nm CMOS ASIC uses a bridge measurement technique and a high sensitive first stage to minimize the influence of any parasitic capacitances.


Publié dans:
IEEE Journal of Solid-State Circuits, 44, 1, 247-257
Année
2009
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
0018-9200
Mots-clefs:
Laboratoires:




 Notice créée le 2010-11-08, modifiée le 2020-10-24


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