SOI digital pixel sensor based on charge pumping
Abstract-In this paper, a digital pixel sensor in SOl is presented. The active part is a partially depleted Sol phototransistor. The technique elaborated in [I] was designed and implemented. Moreover, we took advantage of some of the characteristics of the floating body SOl MOSFET to implement a first order delta sigma modulator in each pixel. Measured data show that the pixel has sensitivity of 3mW1m2 and a resolution of about 7bits. This pixel can be operated in two modes: Weak inversion (Idc =1.2μA) and moderate inversion (Idc =15μA).
Electrical Engineering, Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland
Export Date: 19 January 2010
Art. No.: 5184778
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Record created on 2010-10-21, modified on 2016-08-08