SOI digital pixel sensor based on charge pumping

Abstract-In this paper, a digital pixel sensor in SOl is presented. The active part is a partially depleted Sol phototransistor. The technique elaborated in [I] was designed and implemented. Moreover, we took advantage of some of the characteristics of the floating body SOl MOSFET to implement a first order delta sigma modulator in each pixel. Measured data show that the pixel has sensitivity of 3mW1m2 and a resolution of about 7bits. This pixel can be operated in two modes: Weak inversion (Idc =1.2μA) and moderate inversion (Idc =15μA).

Published in:
2009 3Rd International Workshop On Advances In Sensors And Interfaces, 98-103
Presented at:
3rd International Workshop on Advances in Sensors and Interfaces, Trani, ITALY, Jun 25-26, 2009
IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
Electrical Engineering, Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland
Export Date: 19 January 2010
Source: Scopus
Art. No.: 5184778
References: Harik, L., Sallese, J-M., Kayal, M., Transient charge pumping as an efficient technique to measure low light intensity with PD Sol MOSFET (2008) Solid-State Electronics, 52, pp. 597-605. , May; Hill, J.M., Lachman, J., A 900 MHz 2.25 MB cache with on chip CPU now in CU SOl ISSCC 2001, , Session 11 SRAM 11.5; Blagojevic, M., Kayal, M., Pastre, M., Harik, L., Declercq, M.J., Okhonin, S., Fazan, P.C., Capacitorless IT DRAM sensing scheme with automatic reference generation (2006) Solid-State Circuits, IEEE Journal, 41 (6), pp. 1463-1470. , June; Okhonin, S., Nagoga, M., Fazan, P., Principles of transient charge pumping on partially depleted SOI MOSFETs (2002) IEEE Electron Device Letters, 23 (5), pp. 279-281. , DOI 10.1109/55.998876, PII S0741310602045330; Candsy, J.C., Themes, G.C., Oversampling delta-sigma data converters (1992) IEEE Press; J-M., Sallese., A-S. Porret, A novel approach to charge-based nonquasi- static model of the MOS transistor valid in all modes of operation (2000) Solid-State Electronics, 44 (6), pp. 887-894; Sallese, J.-M., Bucher, M., Krummenacher, F., Fazan, P., Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model (2003) Solid-State Electronics, 47, pp. 677-683

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