Conference paper

Delta-sigma loop based on charge pumping in SOI optical sensor

In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order delta-sigma modulator. Measured data show flux densities as low as 3mW/m2 and an SNR of 60 dB. © 2008 IEEE.


    Electrical Engineering, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland

    Export Date: 19 January 2010

    Source: Scopus

    Art. No.: 4716704

    References: Harik, L., Sallese, J.-M., Kayal, M., Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET (2008) Solid-State Electronics, 52, pp. 597-605; Hill, J.M., Lachman, J., A 900 MHz 2.25 MB cache with on chip CPU now in CU SOI (2001) ISSCC, , Session 11 SRAM 11.5; Okhonin, S., Nagoga, M., Fazan, P., Principles of transient charge pumping on partially depleted SOI MOSFETs (2002) IEEE Electron Device Letters, 23 (5), pp. 279-281. , DOI 10.1109/55.998876, PII S0741310602045330; Candsy, J.C., Themes, G.C., (1992) Oversampling Delta-Sigma Data Converters, , IEEE Press; Sallese, J.-M., Bucher, M., Krummenacher, F., Fazan, P., Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model (2003) Solid-State Electronics, 47, pp. 677-683


    Record created on 2010-10-21, modified on 2016-08-08


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