Delta-sigma loop based on charge pumping in SOI optical sensor

In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order delta-sigma modulator. Measured data show flux densities as low as 3mW/m2 and an SNR of 60 dB. © 2008 IEEE.

Published in:
Proceedings of IEEE Sensors, null, null, 1382-1385
Electrical Engineering, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
Export Date: 19 January 2010
Source: Scopus
Art. No.: 4716704
References: Harik, L., Sallese, J.-M., Kayal, M., Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET (2008) Solid-State Electronics, 52, pp. 597-605; Hill, J.M., Lachman, J., A 900 MHz 2.25 MB cache with on chip CPU now in CU SOI (2001) ISSCC, , Session 11 SRAM 11.5; Okhonin, S., Nagoga, M., Fazan, P., Principles of transient charge pumping on partially depleted SOI MOSFETs (2002) IEEE Electron Device Letters, 23 (5), pp. 279-281. , DOI 10.1109/55.998876, PII S0741310602045330; Candsy, J.C., Themes, G.C., (1992) Oversampling Delta-Sigma Data Converters, , IEEE Press; Sallese, J.-M., Bucher, M., Krummenacher, F., Fazan, P., Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model (2003) Solid-State Electronics, 47, pp. 677-683
Other identifiers:
Scopus: 2-s2.0-67649921566

 Record created 2010-10-21, last modified 2018-03-17

Rate this document:

Rate this document:
(Not yet reviewed)