9 MHz vibrating body FET tuning fork oscillator

A 9.4MHz micro-electromechanical oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) is presented in this work. The tuning fork VB-FET used in this work provides a high quality factor of 9400 in the open-loop configuration and a low equivalent resistance. This performance makes the VB-FET an interesting candidate for fully integrated oscillator. An oscillator based on the tuning fork VB-FET is characterized.


Published in:
Frequency Control Symposium, 2009 Joint with the 22nd European Frequency and Time forum. IEEE International , 520 - 523
Presented at:
Joint Meeting of the 23rd European Frequency and Time Forum/IEEE International Frequency Control Symposium, Besancon, FRANCE, Apr 20-24, 2009
Year:
2009
Publisher:
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
Keywords:
Note:
Nanoelectronic Devices Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland, Export Date: 19 January 2010, Source: Scopus, Art. No.: 5168235, References: Nguyen, C.T.C., Mems technology for timing and frequency control (2007) Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on, 54 (2), pp. 251-270; Nathanson, H.C., Newell, W.E., Wickstrom, R.A., Davis, J.J.R., The resonant gate transistor (1967) Electron Devices, IEEE Transactions on, 14 (3), pp. 117-133; Abele, N., Fritschi, R., Boucart, K., Casset, F., Ancey, P., Ionescu, A.M., Suspended-gate mosfet: Bringing new mems functionality into solid-state mos transistor (2005) Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International, pp. 479-481. , R. Fritschi, Ed; Durand, C., Casset, F., Renaux, P., Abele, N., Legrand, B., Renaud, D., Ollier, E., Buchaillot, L., In-plane siliconon- nothing nanometer-scale resonant suspended gate mosfet for in-ic integration perspectives (2008) Electron Device Letters, IEEE, 29 (5), pp. 494-496; Grogg, D., Mazza, M., Tsamados, D., Ionescu, A., Multi-gate vibrating-body field effect transistors (vb-fets) (2008) Electron Devices Meeting, 2008. IEDM 2008. IEEE International, pp. 663-666; Agarwal, M., Chandorkar, S.A., Mehta, H., Candler, R.N., Kim, B., Hopcroft, M.A., Melamud, R., Murmann, B., A study of electrostatic force nonlinearities in resonant microstructures (2008) Applied Physics Letters, 92 (10), pp. 104-106; Kaajakari, V., Koskinen, J.K., Mattila, T., (2005) Phase Noise in Capacitively Coupled Micromechanical Oscillators, 52 (12), pp. 2322-2331. , Dec; Seungbae, L., Nguyen, C.T.C., Influence of automatic level control on micromechanical resonator oscillator phase noise (2003) Frequency Control Symposium and pda Exhibition Jointly with the 17th European Frequency and Time Forum, 2003. Proceedings of the 2003 Ieee International, pp. 341-349
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Scopus: 2-s2.0-70449476507
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 Record created 2010-10-21, last modified 2018-09-13


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