Couche mince semi-conductrice de GaInN, son procédé de préparation, diode électroluminescente comprenant cette couche et dispositif d'éclairage = Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device
Thin, single semi conducting layer of GaInN, possibly containing a small percentage of arsenic, phosphorus or antimony, the said layer emitting at least two visible lights with determined colours which can be combined, particularly to obtain white light. Method for preparing this layer. Light emitting diode (LED), particularly a LED emitting white light comprising such a thin layer in its active zone, and lighting device comprising such a diode.
8849163
French patent N°0004683
Alternative title(s) : (de) Herstellungsverfahren einer halbleiter-dünnschicht aus gainn (fr) Procede de preparation d'une couche mince semi-conductrice de gainn (en) Method for preparing a thin semiconductor gainn layer
Patent number | Country code | Kind code | Date issued |
JP5296280 | JP | B2 | 2013-09-25 |
AT524836 | AT | T | 2011-09-15 |
EP1273049 | EP | B1 | 2011-09-14 |
CA2405517 | CA | C | 2009-12-22 |
KR100900933 | KR | B1 | 2009-06-08 |
FR2807909 | FR | B1 | 2006-07-28 |
US6730943 | US | B2 | 2004-05-04 |
JP2003530703 | JP | A | 2003-10-14 |
CN1422444 | CN | A | 2003-06-04 |
US2003092209 | US | A1 | 2003-05-15 |
EP1273049 | EP | A1 | 2003-01-08 |
KR20030001405 | KR | A | 2003-01-06 |
AU5048601 | AU | A | 2001-10-23 |
FR2807909 | FR | A1 | 2001-10-19 |
CA2405517 | CA | A1 | 2001-10-18 |
WO0178157 | WO | A1 | 2001-10-18 |