Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings

A device includes a silicon substrate provided with a coating including at least one stacking constituted by a plane of GaN or GaInN quantum dots emitting visible light at room temperature in a respective layer of AIN or GaN. The method of making the device is also disclosed. The device can be incorporated in electroluminescent devices and exchange devices, emitting white light in particular.


Year:
2002
Other identifiers:
EPO Family ID: 24544686
Patent number(s):
Laboratories:




 Record created 2010-10-14, last modified 2018-03-17


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