Electromagnetic wave detector with quantum well structure
An electromagnetic wave detector formed of semiconductor materials includes at least one quantum well in which there is provided a fine layer of a material with a gap width that is smaller than that of the quantum well layer. For example, in the case of a GaAlAs/GaAs/GaAlAs, there is provision for a fine layer of InAs. In this way, the difference of energy levels between the two permitted levels is increased and detection of short wavelengths may be accomplished.
9431640
Alternative title(s) : (de) Quantum-well-detektor für elektromagnetische wellen. (fr) Détecteur d'ondes électromagnétiques à puits quantiques. (en) Quantum well detector for electromagnetic waves.
Patent number | Country code | Kind code | Date issued |
US5506418 | US | A | 1996-04-09 |
FR2693594 | FR | B1 | 1994-08-26 |
FR2693594 | FR | A1 | 1994-01-14 |
EP0578557 | EP | A1 | 1994-01-12 |