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conference paper
AlGaN/GaN HEMTs on resistive Si(111) substrate: From material assessment to RF power performances
2002
International Workshop On Nitride Semiconductors, Proceedings
In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(111) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and high frequency performances of submicron gate length devices are analysed demonstrating their RF power capability.
Type
conference paper
Authors
Semond, F.
•
Lorenzini, P.
•
•
Natali, F.
•
Damilano, B.
•
Massies, J.
•
Hoel, V.
•
Minko, A.
•
Vellas, N.
•
Gaquiere, C.
Publication date
2002
Publisher
Published in
International Workshop On Nitride Semiconductors, Proceedings
Start page
61
End page
64
Peer reviewed
REVIEWED
EPFL units
Event name | Event place | Event date |
AACHEN, GERMANY | Jul 22-25, 2002 | |
Available on Infoscience
October 13, 2010
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