Phonons and holes in magnesium doped GaN
P doping of gallium nitride by incorporation of magnesium in the layers was controlled recently. Only Popovici et al. [1] have published the results of a Raman study on p type GaN. In the present communication, we report on the interaction of the free hole gas with the axial A(1)(LO) or planar E-1(LO) phonon modes, evidenced by Raman scattering: the observed coupled phonon-plasmon mode is found very different from the corresponding one evidenced in silicon doped (n type) GaN. We compare the experimental data with the lineshape calculated within a dielectric model, using the results of electrical measurements. These results are also compared with infrared reflectivity spectra.
1998
Materials Research Society Symposium Proceedings; 512
333
338
REVIEWED
Event name | Event place | Event date |
SAN FRANCISCO, CA | Apr 13-15, 1998 | |