GaN and InGaN quantum dots grown by MBE: from UV to red light emission

Group-III nitride quantum dots (QDs) are grown by molecular beam epitaxy. GaN/AIN QDs are used as a prototypical system for studying the interplay of the carrier localization and the built-in polarization field. The latter effect pushes the QD photoluminescence (PL) in the red range. InGaN/GaN QDs are fabricated taking advantage of the Stranski-Krastanow growth mode transition. In0.15Ga0.85N/GaN QDs exhibit a superior radiative efficiency compared to low In content (x less than or equal to0.1) InxGa1-xN/GaN quantum wells (QWs). However, the optical properties of InGaN/GaN QWs with an In composition of 20% are very close to those of In0.15Ga0.85N/GaN QDs. These similarities could be related to strong In composition fluctuations forming deep potential wells for x greater than or equal to0.15. Blue to red PL at room temperature is then observed on In0.2Ga0.8N/GaN QWs despite the huge density of dislocations. 0.4 to 0.6 mum electroluminescence is obtained from InGaN/GaN based light emitting diodes.

Published in:
Proceedings Of The International Workshop On Nitride Semiconductors, 1, 397-402
Presented at:
International Workshop on Nitride Semiconductors (IWN 2000), NAGOYA, JAPAN, Sep 24-27, 2000
Inst Pure Applied Physics

 Record created 2010-10-13, last modified 2018-03-17

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