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  4. Neutral donor bound excitons studied by selective photoluminescence in wurtzite GaN
 
conference paper

Neutral donor bound excitons studied by selective photoluminescence in wurtzite GaN

Teisseire, M.
•
Grandjean, N.  
•
Lahreche, H.
Show more
2001
Proceedings Of The 25Th International Conference On The Physics Of Semiconductors, Pts I And Ii
25th International Conference on the Physics of Semiconductors (ICPS25)

Selective photoluminescence experiments have been used to analyse the neutral donor bound exciton spectra in n type wurtzite GaN epitaxial layers deposited on 6H-SiC, Al2O3 and GaN substrates, In heterostructure layers, the existence of residual strain distributions make possible the observation of resonant sharp lines due to the recombination of bound excitons selectively created in excited states. It is shown that the excited states consist of rotational states of the hole belonging to the A valence band in GaN/sapphire and in homolayers. In GaN/SiC both A and B valence band states are involved.

  • Details
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Type
conference paper
Author(s)
Teisseire, M.
Grandjean, N.  
Lahreche, H.
Beaumont, B.
Grzegory, L.
Porowski, S.
Tronc, P.
Neu, G.
Date Issued

2001

Publisher

Springer-Verlag

Published in
Proceedings Of The 25Th International Conference On The Physics Of Semiconductors, Pts I And Ii
Series title/Series vol.

Springer Proceedings In Physics; 87

Start page

1577

End page

1578

Subjects

Oscillator-Strengths

•

Epilayers

•

Epitaxy

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
LASPE  
Event nameEvent placeEvent date
25th International Conference on the Physics of Semiconductors (ICPS25)

OSAKA, JAPAN

Sep 17-22, 2000

Available on Infoscience
October 13, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/55473
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