Neutral donor bound excitons studied by selective photoluminescence in wurtzite GaN

Selective photoluminescence experiments have been used to analyse the neutral donor bound exciton spectra in n type wurtzite GaN epitaxial layers deposited on 6H-SiC, Al2O3 and GaN substrates, In heterostructure layers, the existence of residual strain distributions make possible the observation of resonant sharp lines due to the recombination of bound excitons selectively created in excited states. It is shown that the excited states consist of rotational states of the hole belonging to the A valence band in GaN/sapphire and in homolayers. In GaN/SiC both A and B valence band states are involved.


Published in:
Proceedings Of The 25Th International Conference On The Physics Of Semiconductors, Pts I And Ii, 87, 1577-1578
Presented at:
25th International Conference on the Physics of Semiconductors (ICPS25), OSAKA, JAPAN, Sep 17-22, 2000
Year:
2001
Publisher:
Springer-Verlag
Keywords:
Laboratories:




 Record created 2010-10-13, last modified 2018-03-17


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)