Loading...
conference paper
Modification of InGaN quantum well luminescence by microstructured buffer layers
2007
Physics of Semiconductors, Pts A and B
With the aim of increasing the efficiency of green and blue light-emitting diodes, we investigate the luminescence of InGaN/GaN quantum wells on structured GaN buffer layers.
Type
conference paper
Authors
Bonetti, Yargo C.
•
Graf, Marcel
•
Hofstetter, Daniel
•
•
Ganiere, Jean-Daniel
•
Publication date
2007
Publisher
Published in
Physics of Semiconductors, Pts A and B
Series title/Series vol.
Aip Conference Proceedings; 893
Start page
445
End page
446
Peer reviewed
REVIEWED
EPFL units
Event name | Event place | Event date |
Vienna, AUSTRIA | Jul 24-28, 2006 | |
Available on Infoscience
October 13, 2010
Use this identifier to reference this record