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Modification of InGaN quantum well luminescence by microstructured buffer layers

Bonetti, Yargo C. ; Graf, Marcel ; Hofstetter, Daniel ; Carlin, Jean-Francois[...]

With the aim of increasing the efficiency of green and blue light-emitting diodes, we investigate the luminescence of InGaN/GaN quantum wells on structured GaN buffer layers.


Published in:
Physics of Semiconductors, Pts A and B, 893, 445-446
Presented at:
28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, AUSTRIA, Jul 24-28, 2006
Year:
2007
Publisher:
AIP
Keywords:
InGaN ; cathodoluminescence ; quantum well ; nitrides ; microstructured surface
Laboratories:
LASPE

Record appears in:
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published



 Record created 2010-10-13, last modified 2018-03-17


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