Modification of InGaN quantum well luminescence by microstructured buffer layers

With the aim of increasing the efficiency of green and blue light-emitting diodes, we investigate the luminescence of InGaN/GaN quantum wells on structured GaN buffer layers.


Published in:
Physics of Semiconductors, Pts A and B, 893, 445-446
Presented at:
28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, AUSTRIA, Jul 24-28, 2006
Year:
2007
Publisher:
AIP
Keywords:
Laboratories:




 Record created 2010-10-13, last modified 2018-03-17


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