Modification of InGaN quantum well luminescence by microstructured buffer layers
Bonetti, Yargo C.; Graf, Marcel; Hofstetter, Daniel; Carlin, Jean-Francois; Ganiere, Jean-Daniel; Grandjean, Nicolas
2007

Abstract

With the aim of increasing the efficiency of green and blue light-emitting diodes, we investigate the luminescence of InGaN/GaN quantum wells on structured GaN buffer layers.

Details

Title Modification of InGaN quantum well luminescence by microstructured buffer layers
Author(s) Bonetti, Yargo C. ; Graf, Marcel ; Hofstetter, Daniel ; Carlin, Jean-Francois ; Ganiere, Jean-Daniel ; Grandjean, Nicolas
Published in Physics of Semiconductors, Pts A and B
Series Aip Conference Proceedings
Volume 893
Pages 445-446
Conference 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, AUSTRIA, Jul 24-28, 2006
Date 2007
Publisher AIP
Keywords
Laboratories LASPE
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published

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