Modification of InGaN quantum well luminescence by microstructured buffer layers
With the aim of increasing the efficiency of green and blue light-emitting diodes, we investigate the luminescence of InGaN/GaN quantum wells on structured GaN buffer layers.
Published in:
Physics of Semiconductors, Pts A and B, 893, 445-446
Presented at:
28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, AUSTRIA, Jul 24-28, 2006
Publisher:
AIP
Keywords:
Laboratories:
Record created 2010-10-13, last modified 2018-03-17