Modification of InGaN quantum well luminescence by microstructured buffer layers

• Presented at: 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, AUSTRIA, Jul 24-28, 2006
• Published in: Physics of Semiconductors, Pts A and B, vol. 893, p. 445-446
• Series: Aip Conference Proceedings
• AIP, 2007

With the aim of increasing the efficiency of green and blue light-emitting diodes, we investigate the luminescence of InGaN/GaN quantum wells on structured GaN buffer layers.

Keywords: InGaN ; cathodoluminescence ; quantum well ; nitrides ; microstructured surface

Reference

• EPFL-CONF-153173

Record created on 2010-10-13, modified on 2017-05-12