Indium distribution inside quantum wells: The effect of growth interruption in MBE

Quantitative analysis of high resolution electron microscopy image has been carried out to measure the indium distribution inside InGaN/GaN quantum well. The analyzed samples were nominally grown with 15% indium composition by molecular beam epitaxy with interruptions during the InxGa1-xN layer growth. The strain distribution is not homogeneous inside the quantum wells, and indium rich clusters can be observed. Areas with almost no indium concentration were observed corresponding to the growth interruption. A comparison with samples grown by metalorganic chemical vapor deposition is attempted.


Published in:
Gan And Related Alloys-2002, 743, 393-398
Presented at:
Symposium on GaN and Related Alloys held at the 2002 MRS Fall Meeting, BOSTON, MA, Dec 02-06, 2002
Year:
2003
Publisher:
Materials Research Society
Keywords:
Laboratories:




 Record created 2010-10-11, last modified 2018-09-13


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