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  4. Solar blind detectors based on AlGaN grown on sapphire
 
conference paper

Solar blind detectors based on AlGaN grown on sapphire

Grandjean, N.  
•
Omnes, F.
•
Reverchon, J. L.
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2005
E-MRS 2004 Fall Meeting Symposia C and F
Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting

Solar blind detectors have been fabricated based on AlGaN heterostructures grown on sapphire by molecular beam epitaxy or chemical vapour deposition. MSM and Schottky detectors were investigated. High performance devices have been obtained thanks to an optimization of the material crystalline quality (including the suppression of cracks) and of the process. We show that the spectral limitations of MSM detectors are dictated by intrinsic phenomena that are analysed in details while the responsivity and detectivity also depends on the technological process with a special emphasis on the geometry of finger and contact pads. One and two dimensional arrays have been fabricated and preliminary results are given. (c) 2005 WILEY-VCH Verlag GmbH S Co. KGaA, Weinheim.

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Type
conference paper
DOI
10.1002/pssc.200460603
Author(s)
Grandjean, N.  
Omnes, F.
Reverchon, J. L.
Mosca, M.
Duboz, J. Y.
Date Issued

2005

Publisher

VCH Publishers

Published in
E-MRS 2004 Fall Meeting Symposia C and F
Series title/Series vol.

Physica Status Solidi C-Current Topics In Solid State Physics

Volume

2

Start page

964

End page

971

Subjects

Flame Detection

•

Photodiodes

•

Photodetectors

•

Detectivity

•

Silicon

•

Films

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LASPE  
Event nameEvent placeEvent date
Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting

Warsaw, POLAND

Sep 06-10, 2004

Available on Infoscience
October 11, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/55380
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