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  4. Cathodoluminescence And Transmission Electron-Microscopy Study Of Island Formation On Inas/Inp Qw Structures During Growth Interruptions
 
conference paper

Cathodoluminescence And Transmission Electron-Microscopy Study Of Island Formation On Inas/Inp Qw Structures During Growth Interruptions

PACHECO, F.
•
CARLIN, J. F.  
•
RUDRA, A.
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1994
Defect Recognition And Image Processing In Semiconductors And Devices
5th International Conference on Defect Recognition and Image Processing in Semiconductors and Devices

A study on the effect of growth interruptions on InAs/InP strained quantum wells (QW) by cathodoluminescence (CL) at helium temperature and transmission electron microscopy (TEM) is reported. The samples are grown by chemical beam epitaxy (CBE) with and without growth interruptions of 15s at the second interface of the InAs-SQW. Previous photoluminescence measurements showed the formation of InAs large range roughness and/or islands up to 8-monolayers-thick during the interruption. To clarify the structure of the thickness fluctuation TEM and CL observations are performed. QW-islands are revealed by TEM planar view observations. The localized CL spectra, in concordance with the TEM observations, demonstrate that no InAs QWs are present between the island. Only some isolated InAs islands appear in the samples without growth interruption.

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Type
conference paper
Author(s)
PACHECO, F.
CARLIN, J. F.  
RUDRA, A.
MOLINA, S. I.
GARCIA, R.
ARAUJO, D.
Date Issued

1994

Publisher

Iop

Published in
Defect Recognition And Image Processing In Semiconductors And Devices
Series title/Series vol.

Institute Of Physics Conference Series

Start page

335

End page

338

Subjects

Quantum-Well Structures

•

Photoluminescence

•

Epitaxy

•

Gainas

•

Gaas

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
LASPE  
Event nameEvent placeEvent date
5th International Conference on Defect Recognition and Image Processing in Semiconductors and Devices

SANTANDER, SPAIN

Sep 06-10, 1993

Available on Infoscience
October 11, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/55378
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