GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer
2009
Abstract
Nitride blue lasers including an AlInN cladding lattice matched to GaN were fabricated. Lasing at 415nm is observed at 300K with a threshold current density of 7.5kA/cm(2) and a peak power of 140mW at 1.2A. (C) 2009 Optical Society of America
Details
Title
GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer
Author(s)
Feltin, E. ; Castiglia, A. ; Cosendey, G. ; Carlin, J.-F. ; Butte, R. ; Grandjean, N.
Published in
2009 Conference On Lasers And Electro-Optics And Quantum Electronics And Laser Science Conference (Cleo/Qels 2009)
Pages
1631-1632
Conference
Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009), Baltimore, MD, Jun 02-04, 2009
Date
2009
Publisher
Ieee
Other identifier(s)
View record in Web of Science
Laboratories
LASPE
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2010-10-11