GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

Nitride blue lasers including an AlInN cladding lattice matched to GaN were fabricated. Lasing at 415nm is observed at 300K with a threshold current density of 7.5kA/cm(2) and a peak power of 140mW at 1.2A. (C) 2009 Optical Society of America


Published in:
2009 Conference On Lasers And Electro-Optics And Quantum Electronics And Laser Science Conference (Cleo/Qels 2009), Vols 1-5, 1631-1632
Presented at:
Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009), Baltimore, MD, Jun 02-04, 2009
Year:
2009
Publisher:
Ieee
Laboratories:




 Record created 2010-10-11, last modified 2018-03-17


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