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conference paper
GaN-based single mirror light emitting diodes
2003
Compound Semiconductors 2002
We present a study on the dependence of the external Quantum Efficiency (QE) of Light Emitting Diodes (LEDs) on the device properties and p-contact metallisation. The external QE could be doubled by changing the p-type contact from oxidised Ni/Au to non-annealed Ag. The best value for the external QE of an unpackaged device is 13.5% and is obtained when the reflection from the Ag mirror contact is in phase with the QW emission.
Type
conference paper
Authors
Publication date
2003
Publisher
Published in
Compound Semiconductors 2002
Series title/Series vol.
Institute of Physics Conference Series
Volume
174
Start page
419
End page
422
Peer reviewed
REVIEWED
EPFL units
Event name | Event place | Event date |
Lausanne, Switzerland | 7-10 October 2002 | |
Available on Infoscience
October 11, 2010
Use this identifier to reference this record