Loading...
research article
3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser
2010
3 W at genuine red wavelength of 650 nm has been achieved from a semiconductor disk laser by frequency doubling. An InP based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector resulting in an integrated monolithic gain mirror. 6.6 W of output power at the fundamental wavelength of 1.3 mu m represents the best achievement reported to date for this type of lasers. (C) 2010 Optical Society of America
Type
research article
Web of Science ID
WOS:000283686500016
Authors
Publication date
2010
Publisher
Published in
Volume
18
Issue
21
Start page
645
End page
650
Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
October 6, 2010
Use this identifier to reference this record