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research article
Nonpolar GaN-based microcavity using AlN/GaN distributed bragg reflector
Nonpolar GaN based microcavity (MC) made of a bottom AlN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO2/SiNx DBR has been fabricated on a-plane GaN template. The 13 pair AlN/GaN DBR, centered around 372 nm, exhibits a peak reflectivity of similar to 95% together with a flat stopband of 30 nm width. The cavity mode centered around 390 nm is characterized by a full width at half maximum of 4 nm. The optical properties of both the DBR and MC are well reproduced when accounting for linear birefringence effects. (c) 2008 American Institute of Physics.
Type
research article
Web of Science ID
WOS:000253237900014
Authors
Zhu, T.
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Christmann, G.
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Pinquier, C.
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Feltin, E.
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Martin, D.
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Publication date
2008
Published in
Volume
92
Issue
6
Article Number
1114
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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