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research article
Polarization field mapping of Al0.85In0.15N/AlN/GaN heterostructure
Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85In0.15N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within the AlN layer. A two-dimensional electron gas with a density of similar to 2.1x10(13) cm(-2) was located in the GaN layer at similar to 0.8 nm away from the AlN/GaN interface in reasonable agreement with the reported simulations. Electron microscopy confirmed that the Al0.85In0.15N layer was uniform and that Al0.85In0.15N/AlN and AlN/GaN interfaces were abrupt and well defined.
Type
research article
Web of Science ID
WOS:000264633500016
Authors
Zhou, L.
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Cullen, D. A.
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Smith, D. J.
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McCartney, M. R.
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Mouti, A.
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Gonschorek, M.
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Feltin, E.
•
•
Publication date
2009
Published in
Volume
94
Issue
12
Article Number
1909
Peer reviewed
REVIEWED
Available on Infoscience
October 5, 2010
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