Polarization field mapping of Al0.85In0.15N/AlN/GaN heterostructure
Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85In0.15N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within the AlN layer. A two-dimensional electron gas with a density of similar to 2.1x10(13) cm(-2) was located in the GaN layer at similar to 0.8 nm away from the AlN/GaN interface in reasonable agreement with the reported simulations. Electron microscopy confirmed that the Al0.85In0.15N layer was uniform and that Al0.85In0.15N/AlN and AlN/GaN interfaces were abrupt and well defined.
Keywords: aluminium compounds ; electron holography ; electron microscopy ; gallium ; compounds ; high electron mobility transistors ; III-V semiconductors ; indium compounds ; semiconductor heterojunctions ; two-dimensional ; electron gas ; wide band gap semiconductors ; ELECTRON HOLOGRAPHY
Record created on 2010-10-05, modified on 2016-08-08