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research article
Selective etching of AlInN/GaN heterostructures for MEMS technology
An etching technology for the patterning of suspended GaN structures on lattice matched AlInN sacrificial layers is studied. Selective dry RIE etching of GaN to AlInN is demonstrated, which allows effective pattern transfer without affecting lower layers. On the other hand, wet etching of AlInN in highly concentrated KOH solutions has also been studied. We show that high vertical and lateral etch rates are possible. For a fast and selective etching suitable for MEMS technology, a high density of defects at the surface is required due to their positive influence on the lateral etch rate. (c) 2007 Elsevier B.V. All rights reserved.
Type
research article
Web of Science ID
WOS:000247182500109
Authors
Publication date
2007
Published in
Volume
84
Issue
5-8
Start page
1152
End page
1156
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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