Loading...
research article
As/P interdiffusion in ultrathin InAs/InP strained quantum wells
The intermixing process of ultrathin InAs/InP strained quantum well structures by thermal annealing at 730-830-degrees-C is investigated by photoluminescence measurements. Analyzing the results using a microscopic model, the interdiffusion process is characterized by an activation energy close to 3.8+/-2.0 eV, leading to an interdiffusion coefficient close to 7+/-0.5x10(-7) cm2/s at 830-degrees-C.
Type
research article
Authors
•
Taylor, S.
•
Buhlmann, H. J.
•
•
•
•
Publication date
1994
Published in
Volume
65
Issue
3
Start page
341
End page
343
Subjects
Peer reviewed
REVIEWED
Available on Infoscience
October 5, 2010
Use this identifier to reference this record