As/P interdiffusion in ultrathin InAs/InP strained quantum wells

The intermixing process of ultrathin InAs/InP strained quantum well structures by thermal annealing at 730-830-degrees-C is investigated by photoluminescence measurements. Analyzing the results using a microscopic model, the interdiffusion process is characterized by an activation energy close to 3.8+/-2.0 eV, leading to an interdiffusion coefficient close to 7+/-0.5x10(-7) cm2/s at 830-degrees-C.


Published in:
Applied Physics Letters, 65, 3, 341-343
Year:
1994
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-18


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