LUMINESCENCE AND TRANSPORT-PROPERTIES OF HIGH-QUALITY INP GROWN BY CBE BETWEEN 450-DEGREES-C AND 550-DEGREES-C

A Hall mobility as high as 153,800 cm2 V-1 s-1 at 77 K with N(d) - N(a) = 1.5 x 10(14) cm-3 has been obtained by adjusting the growth temperature and the phosphine cracking temperature. The 4 K photoluminescence spectra show finely resolved excitonic transitions for layers grown above 535-degrees-C with linewidths as narrow as 0.07 meV. The use of substrates misoriented 2-degrees and 3.5-degrees towards (111)A significantly improves the morphology at the cost of a slight increase in the impurity incorporation.


Publié dans:
Journal of Crystal Growth, 111, 1-4, 589-593
Année
1991
ISSN:
0022-0248
Mots-clefs:
Laboratoires:




 Notice créée le 2010-10-05, modifiée le 2018-03-17


Évaluer ce document:

Rate this document:
1
2
3
 
(Pas encore évalué)