RAMAN-STUDY OF A SINGLE INP/INAS/INP STRAINED QUANTUM-WELL

We report on the first observation of both confined optical phonons and interface phonons in a single strained InAs quantum well grown on InP. Quasi resonant Raman measurements allow for the observation of interface modes. Informations about the mismatch induced strain in the InAs layer are obtained. The effect of the strain and the confinement on the longitudinal and transverse optical InAs modes are estimated.


Published in:
Solid State Communications, 84, 7, 705-709
Year:
1992
ISSN:
0038-1098
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-18


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