RAMAN-STUDY OF A SINGLE INP/INAS/INP STRAINED QUANTUM-WELL
We report on the first observation of both confined optical phonons and interface phonons in a single strained InAs quantum well grown on InP. Quasi resonant Raman measurements allow for the observation of interface modes. Informations about the mismatch induced strain in the InAs layer are obtained. The effect of the strain and the confinement on the longitudinal and transverse optical InAs modes are estimated.