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research article
Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains
2007
AllnN/GaN high electron mobility transistors (HEMTs) on sapphire substrate have yielded a maximum drain current density of 1.26 A/mm with a current gain cutoff and maximum oscillation frequencies about 26 and 40 GHz, respectively, for a 0.25 mu m gate length device. Pulsed characterisations indicate absence of the virtual gate effect and reveal that the drain current dispersion is mainly due to thermal effects. Temperature stress experiments up to 800 degrees C indicate that surface and hetero-interface are inherently stable. The reasons for the behaviour are discussed.
Type
research article
Web of Science ID
WOS:000245683200036
Authors
Medjdoub, F.
•
Ducatteau, D.
•
Gaquiere, C.
•
•
Gonschorek, M.
•
Feltin, E.
•
Py, M. A.
•
•
Kohn, E.
Publication date
2007
Published in
Volume
43
Issue
5
Start page
309
End page
311
Subjects
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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