Small-signal characteristics of AlInN/GaN HEMTs

DC and RF measurements of an emerging AIInN/GaN high electron mobility transistor (HEMT) technology for power performances are reported. High electron transport properties in this structure attributed to the material quality are demonstrated. Indeed, in spite of a basic technology which provides high access resistances, high frequency performances with a cutoff and maximum oscillation frequencies about 26 and 40 GHz, respectively, at V-DS = 10 V were achieved. A maximum drain current density more than 1.3 A/mm with a pinch-off breakdown voltage about 40 V without any passivation was obtained. These results show that this device is very promising for high power performances at high frequency.


Published in:
Electronics Letters, 42, 13, 779-780
Year:
2006
ISSN:
0013-5194
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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