Loading...
research article
Barrier-layer scaling of InAlN/GaN HEMTs
We discuss the characteristics of In0.17Al0.83N/GaN high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition. The maximum drain current (at V-G = +2.0 V) decreased with decreasing barrier thickness due to the gate forward drive limitation and residual surface-depletion effect. Full pinchoff and low leakage are observed. Even with 3-nm ultrathin barrier, the heterostructure and contacts are thermally highly stable (up to 1000 degrees C).
Type
research article
Web of Science ID
WOS:000255317400003
Authors
Medjdoub, F.
•
Alomari, M.
•
•
Gonschorek, M.
•
Feltin, E.
•
Py, M. A.
•
•
Kohn, E.
Publication date
2008
Published in
Volume
29
Issue
5
Start page
422
End page
425
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
Use this identifier to reference this record