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research article
In-situ monitoring of GaN growth by hydride vapor phase epitaxy
In-situ reflectivity measurements of the growth surface during deposition in a Hydride Vapor Phase Epitaxy system are presented. The GaN growth rate increases linearly with the HCl flow and increases monotonically with the ammonia flow. Following the replacement of the carrier gas nitrogen by hydrogen, the growth rate initially increases, passes through a maximum at a H-2 concentration of 0.15 and then decreases.
Type
research article
Authors
Publication date
2002
Published in
Volume
194
Issue
2
Start page
520
End page
523
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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