Visible InGaN/GaN quantum-dot materials and devices
General properties of III-V nitride-based quantum dots (QDs) are presented, with a special emphasis on InGaN/GaN QDs for visible optoelectronic devices. Stranski-Krastanov GaN/AIN dots are first discussed as a prototypical system. it is shown that the optical transition energies are governed by a giant quantum-confined Stark effect, which is the consequence of the presence of a large built-in internal electric field of several MV/cm. Then we move to InGaN/GaN QDs, reviewing different fabrication approaches and their main optical properties. In particular, we focus on InGaN dots that are formed spontaneously by in composition fluctuations in InGaN quantum wells. Finally, some advantages and limitations of nitride laser diodes with active regions based on InGaN QDs are discussed, pointing out the requirements on dot uniformity and density in order to be able to exploit the expected quantum confinement effects in future devices.
Keywords: GaN ; InGaN alloy ; laser diodes ; light-emitting diodes ; photoluminescence ; quantum dots ; quantum wells ; III-V semiconductors ; MOLECULAR-BEAM EPITAXY ; CHEMICAL-VAPOR-DEPOSITION ; LIGHT-EMITTING-DIODES ; MULTIQUANTUM-WELL STRUCTURES ; PIEZOELECTRIC ; FIELD ; SELECTIVE GROWTH ; ROOM-TEMPERATURE ; LASER GAIN ; GAN ; EMISSION
Record created on 2010-10-05, modified on 2016-08-08