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research article
Narrow UV emission from homogeneous GaN/AlGaN quantum wells
The authors report on the achievement of narrow ultraviolet emission using GaN/AlGaN quantum wells grown by metal organic vapor phase epitaxy. The origin of the inhomogeneous broadening of the emission is explained by means of micro-photoluminescence and atomic force microscopy measurements. The effect of the well/barrier interface roughness on the linewidth is found to be marginal, while the impact of Al composition fluctuations of the barriers is highly critical. Emission linewidths as small as 5 meV at 10 K are obtained by decreasing the aluminum concentration fluctuations in the AlGaN barrier. (c) 2007 American Institute of Physics.
Type
research article
Web of Science ID
WOS:000243582000017
Authors
Publication date
2007
Published in
Volume
90
Issue
2
Article Number
1905
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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