Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers

Very narrow spontaneous emission (Deltalambda similar to 0.5 nm), corresponding to a quality factor Q in excess of 800, has been obtained under continuous-wave excitation at room temperature with an AlInN/GaN monolithic microcavity. The structure is made of thin ln(x)Ga(1-x)N/GaN (x = 0.15) multiple quantum wells inserted in a GaN 3lambda/2 (lambda = 420 nm) cavity surrounded by lattice-matched AlInN/GaN distributed Bragg reflectors.


Published in:
Electronics Letters, 41, 2, 94-95
Year:
2005
ISSN:
0013-5194
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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