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research article
HIGH-SPEED INP/GAINAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS GROWN BY CHEMICAL BEAM EPITAXY
We report the fabrication and characterization of lateral metal-semiconductor-metal (MSM) photodiodes on an InP substrate. The photoabsorbing layer is made of InGaAs covered by a thin InP Schottky barrier enhancement layer. Schottky contacts for the detectors were formed by the evaporation of Au and patterned using a lift-off technique. The MSM photodiodes exhibit a dark current lower than 200 nA at 15-V bias, an efficient photoresponse up to 1.6 mum, and a fast deconvoluted full width at half maximum response of about 25 ps at 12-V bias.
Type
research article
Authors
Publication date
1994
Published in
Volume
65
Issue
2
Start page
228
End page
230
Subjects
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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