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research article
Impact of disorder on high quality factor III-V nitride microcavities
The authors report on the micron scale characterization of a monolithic GaN microcavity (MC) with lattice matched AlInN/GaN distributed Bragg reflectors by means of a microtransmission setup. This technique allows extracting very high quality factors (Q up to 2800), in accordance with theoretical predictions, contrary to what was previously reported for nitride based MCs. Furthermore, two-dimensional mappings of the MC transmission spectrum allow probing the disorder in this MC. The direct relationship between an increased disorder and a reduction in the Q factor is clearly observed. (c) 2006 American Institute of Physics.
Type
research article
Web of Science ID
WOS:000243157600001
Authors
Publication date
2006
Published in
Volume
89
Issue
26
Article Number
1101
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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