Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guided devices at room temperature under pulsed current injection conditions. Direct comparison with structures including only a standard Al0.07Ga0.93N bottom cladding shows an improved optical confinement. This is exemplified by a decreased threshold current density.


Published in:
Electronics Letters, 44, 8, 521-522
Year:
2008
ISSN:
0013-5194
Laboratories:




 Record created 2010-10-05, last modified 2018-01-28


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