Loading...
research article
Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers
Nitride-based blue laser diode structures with either Al0.83In0.17N/Al0.07Ga0.93N or Al0.87In0.13N bottom claddings have been fabricated and compared to standard structures including solely Al0.07Ga0.93N bottom claddings. Lasing emission at 415 nm is achieved in gain-guided structures at room temperature under pulsed current injection. Devices including the Al0.83In0.17N/Al0.07Ga0.93N bottom cladding exhibit superior device performance. This is a consequence of a better optical mode confinement, as expected from modeling.
Type
research article
Web of Science ID
WOS:000266263400077
Authors
Publication date
2009
Published in
Volume
94
Issue
19
Article Number
3506
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
Use this identifier to reference this record